SKM100GAL12T4 ? by semikron rev. 0 ? 08.03.2010 1 semitrans ? 2 gal fast igbt4 modules SKM100GAL12T4 features ?v ce(sat) with positive temperature coefficient ? high short circuit capability, self limiting to 6 x icnom ? fast & soft inverse cal diodes ? large clearance (10 mm) and creepage distances (20 mm) ? isolated copper baseplate using dbc technology (direct copper bonding) ? ul recognized, file no. e63532 typical applications* ? dc/dc ? converter ? brake chopper ? switched reluctance motor ? dc ? motor remarks ? case temperature limited to t c = 125c max, recomm. t op = -40 ... +150c, product rel. results valid for t j = 150 absolute maximum ratings symbol conditions values unit igbt v ces t j =25c 1200 v i c t j = 175 c t c =25c 160 a t c =80c 123 a i cnom 100 a i crm i crm = 3xi cnom 300 a v ges -20 ... 20 v t psc v cc = 800 v v ge 15 v v ces 1200 v t j = 150 c 10 s t j -40 ... 175 c inverse diode i f t j = 175 c t c =25c 121 a t c =80c 91 a i fnom 100 a i frm i frm = 3xi fnom 300 a i fsm t p = 10 ms, sin 180, t j =25c 550 a t j -40 ... 175 c freewheeling diode i f t j = 175 c t c =25c 121 a t c =80c 91 a i fnom 100 a i frm i frm = 3xi fnom 300 a i fsm t p = 10 ms, sin 180, t j =25c 550 a t j -40 ... 175 c module i t(rms) t terminal =t terminal <80c 200 a t stg -40 ... 125 c v isol ac sinus 50hz, t = 1 min 4000 v characteristics symbol conditions min. typ. max. unit igbt v ce(sat) i c =100a v ge =15v chiplevel t j =25c 1.8 2.05 v t j = 150 c 2.2 2.4 v v ce0 t j =25c 0.8 0.9 v t j = 150 c 0.7 0.8 v r ce v ge =15v t j =25c 10.0 11.5 m ? t j = 150 c 15.0 16.0 m ? v ge(th) v ge =v ce , i c =3.8ma 5 5.8 6.5 v i ces v ge =0v v ce = 1200 v t j =25c 0.1 0.3 ma t j = 150 c ma c ies v ce =25v v ge =0v f=1mhz 6.15 nf c oes f=1mhz 0.40 nf c res f=1mhz 0.345 nf q g v ge =- 8 v...+ 15 v 565 nc r gint t j =25c 7.5 ?
SKM100GAL12T4 2 rev. 0 ? 08.03.2010 ? by semikron t d(on) v cc = 600 v i c =100a v ge =15v r g on =1 ? r g off =1 ? di/dt on = 1800 a/s di/dt off = 1130 a/s t j = 150 c 165 ns t r t j = 150 c 47 ns e on t j = 150 c 15 mj t d(off) t j = 150 c 400 ns t f t j = 150 c 75 ns e off t j = 150 c 10.2 mj r th(j-c) per igbt 0.27 k/w inverse diode v f = v ec i f =100a v ge =0v chip t j =25c 2.20 2.52 v t j = 150 c 2.15 2.47 v v f0 t j =25c 1.3 1.5 v t j = 150 c 0.9 1.1 v r f t j =25c 9.0 10.2 m ? t j = 150 c 12.5 13.7 m ? i rrm i f =100a di/dt off = 1600 a/s v ge =15v v cc = 600 v t j = 150 c 54 a q rr t j = 150 c 15.7 c e rr t j = 150 c 5.9 mj r th(j-c) per diode 0.48 k/w freewheeling diode v f = v ec i f =100a v ge =0v chip t j =25c 2.20 2.52 v t j = 150 c 2.15 2.47 v v f0 t j =25c 1.3 1.5 v t j = 150 c 0.9 1.1 v r f t j =25c 9.0 10.2 m ? t j = 150 c 12.5 13.7 m ? i rrm i f =100a di/dt off = 1600 a/s v ge =15v v cc = 600 v t j = 150 c 165 a q rr t j = 150 c 15.7 c e rr t j = 150 c 5.9 mj r th(j-c) per diode 0.48 k/w module l ce 30 nh r cc'+ee' terminal-chip t c =25c 0.65 m ? t c = 125 c 1m ? r th(c-s) per module 0.04 0.05 k/w m s to heat sink m6 3 5 nm m t to terminals m5 2.5 5 nm nm w 160 g characteristics symbol conditions min. typ. max. unit semitrans ? 2 gal fast igbt4 modules SKM100GAL12T4 features ?v ce(sat) with positive temperature coefficient ? high short circuit capability, self limiting to 6 x icnom ? fast & soft inverse cal diodes ? large clearance (10 mm) and creepage distances (20 mm) ? isolated copper baseplate using dbc technology (direct copper bonding) ? ul recognized, file no. e63532 typical applications* ? dc/dc ? converter ? brake chopper ? switched reluctance motor ? dc ? motor remarks ? case temperature limited to t c = 125c max, recomm. t op = -40 ... +150c, product rel. results valid for t j = 150
SKM100GAL12T4 ? by semikron rev. 0 ? 08.03.2010 3 fig. 1: typ. output ch aracteristic, inclusive r cc'+ ee' fig. 2: rated current vs. temperature i c = f (t c ) fig. 3: typ. turn-on /-off energy = f (i c ) fig. 4: typ. turn-on /-off energy = f (r g ) fig. 5: typ. transfer characteristic fig. 6: typ. gate charge characteristic
SKM100GAL12T4 4 rev. 0 ? 08.03.2010 ? by semikron fig. 7: typ. switching times vs. i c fig. 8: typ. switching times vs. gate resistor r g fig. 9: transient thermal impedance fig. 10: typ. cal diode forward charact., incl. r cc'+ee' fig. 11: cal diode peak reverse recovery current fig. 12: typ. cal diode peak reverse recovery charge
SKM100GAL12T4 ? by semikron rev. 0 ? 08.03.2010 5 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix * the specifications of our components may not be considered as an assurance of component characteristics. components have to b e tested for the respective application. adjustments may be necessary. t he use of semikron products in life support appliances and syste ms is subject to prior specification and written approval by semikron . we therefore strongly recommend prior consultation of our pers onal. semitrans 2 gal
|
